摘要: 通過(guò)自制的鋁電解電容器模型，利用氧化鋁薄膜具有的介電性能，通過(guò)電容量法可以準(zhǔn)確快捷地計(jì)算氧化膜的厚度，并通過(guò)顯微直接觀察法、電解電量法、伏安法進(jìn)行了驗(yàn)證。得到如下結(jié)論：所用鋁條樣品天然氧化膜的厚度約為8.0 nm；在H₃PO₄溶液中形成的氧化膜厚度隨氧化時(shí)間變化為50～80 nm；阻檔層生成率1.219。

關(guān)鍵詞: 電子技術(shù)；陽(yáng)極氧化鋁；氧化膜；介電性能；厚度

中圖分類號(hào): O646.6            文獻(xiàn)標(biāo)識(shí)碼:A            文章編號(hào):1001-2028（2005）12-0064-03

Studies on Testing Measures of the Thickness on Anodized

Alumina Thin Film

LI Dong-dong, ZHU Xu-fei, MENG Da-wei, XIAO Ying-hong

(1. Collega of Materials Science and Engineering, Shanghai Jiaotong University, Shanghai  200030, China; 2. Chemical Engineering Department of Nanjing University of Sci & Tech, Nanjing  210014, China )

Abstract: It was swiftly to obtain the thickness of alumina film by using of it’s dielectric property and capacitor model，which was validated by means of EM, electric quantity and volt-ampere．The results show that, the thickness of natural oxide films is about 8.0 nm; the thickness of oxide films formed in H₃PO₄ solution is varied from 50 nm to 80 nm;        。

Key words: electronic technology; anodic aluminum oxide (AAO)；oxide film；dielectric property；thickness